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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1651 DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25ae SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 60 150 -55~150 ae ae UNIT V V V A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD1651 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 800 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 3.0 5.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 |I A ICES Collector cut-off current VCES=1500V; RBE= 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V 3 MHz VF Diode forward voltage IF=5A 2.0 V JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1651 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) JMnic |
Price & Availability of 2SD1651 |
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