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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1651
DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25ae
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 60 150 -55~150 ae ae UNIT V V V A W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SD1651
SYMBOL
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A , IB=0
800
V
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
3.0
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
|I
A
ICES
Collector cut-off current
VCES=1500V; RBE=
1.0
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
40
130
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
fT
Transition frequency
IC=1A ; VCE=10V
3
MHz
VF
Diode forward voltage
IF=5A
2.0
V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1651
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
JMnic


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